Technical Papers

Mid-Infrared Diode-Lasers between 1.8 and 2.9μm - IEEE Photonics Conference 2014

High-power diode lasers in the mid-infrared wavelength range between 1.8μm and 3.0μm have emerged new possibilities for solid-state pumping and direct material applications based on water absorption with favoured wavelengths at 1.94μm and 2.9μm. GaSb based diode lasers are naturally predestined for this wavelength range. We will present results on MBE grown (AlGaIn)(AsSb) quantum well diode lasers at different wavelengths between 1.8μm and 2.9μm. We achieved output powers up to 1.3W with peak efficiencies of 32% and optical far fields below 80°.

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